Non-volatile memory effect of a high-density NiSi nano-dots floating gate memory using single triangular-shaped Si nanowire channel
نویسندگان
چکیده
A back-gated nonplanar floating gate device based on buried single triangular-shaped Si nanowire channel (width ∼40 nm) and embedded high-density uniform NiSi nano-dots (∼1.5× 1012 cm−2) is demonstrated. Memory properties including memory window, programming/ erasing, and retention are evaluated. The transfer and transient characteristics show clear charge injection, storage and removal effects and the associated programming/erasing mechanism based on fringing electric field is studied. Robust room and high temperature retention performance is observed.
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